PART |
Description |
Maker |
PTFA212001E PTFA212001F |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFB211503EL PTFB211503FL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFB213004F |
High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
|
Infineon Technologies AG
|
MAFR-000087-US1C1T |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
MAMXES0050 |
E-Series Surface Mount Mixer 2110 - 2170 MHz
|
MACOM[Tyco Electronics]
|
PXFC211507SCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
PTFB213208FVV1R250 |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
MRF6S21100NBR1 MRF6S21100N |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
|
Freescale Semiconductors
|
AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER From old datasheet system Gain Block Amplifiers The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
AGB3303S24Q1 AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... 50 OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|